Seoul, South Korea - Samsung Electronics (KRX: 005930) has developed the LPDDR5X DRAM, the industry's fastest low-power dynamic random-access memory chip.
The LPDDR5X offers a speed of 10.7 gigabits per second (Gbps), a 25% increase compared to the previous generation.
The company employed 12-nanometer process technology to achieve a smaller chip size while increasing the maximum capacity of a single package to 32 gigabytes (GB).
This advancement will benefit on-device artificial intelligence (AI) applications that require high-performance, high-capacity, and low-power memory.
The LPDDR5X features power-saving technologies that improve power efficiency by 25% compared to its predecessor.
This enhancement can extend battery life in mobile devices and reduce server energy consumption, minimizing their total cost of ownership.
After verification with mobile application processors and device providers, mass production of the 10.7Gbps LPDDR5X is scheduled to commence in the second half of the year.
Samsung anticipates that the new memory will find applications beyond mobile devices, extending into PCs, accelerators, servers, and automobiles, where higher performance and reliability are essential.
