Seoul, South Korea - Samsung Electronics (KRX: 005930) has released a 32-gigabit (Gb) DDR5 DRAM using 12-nanometer (nm) process technology.
This follows the mass production of Samsung's 12nm-class 16Gb DDR5 DRAM in May 2023.
Why it matters.
This release comes when demand for high-capacity DRAM modules rises, driven by AI and big data application advances.
Samsung's new 32Gb DDR5 DRAM will likely impact industries prioritizing high data storage and efficient energy use.
The Key Points
- Capacity: Samsung's 32Gb DDR5 DRAM offers twice the capacity of its previous 16Gb version in the same package size.
- Energy Efficiency: The new chip reduces power consumption by approximately 10% compared to 128GB modules manufactured with 16 GB DDR5 DRAMs.
- Production Process: Samsung's 128GB DRAM module can now be manufactured without the traditional Through Silicon Via (TSV) process.
- Scalability: The new chip enables future development of DRAM modules with capacities up to 1 Terabyte (TB).
The Big Picture
The release marks the continuation of Samsung's efforts to expand DRAM capacity, a journey that began with a 64-kilobit (Kb) DRAM in 1983.
Over 40 years, capacity has increased by 500,000 to reach today's 32Gb product.
This new chip makes it possible to manufacture 128GB DRAM modules without the TSV process that has been a standard requirement for such modules.
This not only reduces manufacturing complexity but also reduces power consumption by approximately 10%.
Mass production of the new 32Gb DDR5 DRAM is expected to begin by the end of 2023.
Samsung plans to supply these chips for data center applications and other sectors that require high-capacity and energy-efficient memory solutions.
The 32Gb DDR5 DRAM is expected to serve various applications in different industries.
