In a significant leap forward for the global technology sector, Samsung Electronics today announced the start of mass production of its 16 Gigabit (Gb) DDR5 DRAM.
This advanced memory technology utilizes the industry's most advanced 12-nanometer (nm) class process, reaffirming Samsung's leadership in innovative DRAM technology.
"Samsung's industry-leading 12nm-class DDR5 DRAM delivers remarkable performance and power efficiency through differentiated process technology," said Jooyoung Lee, Executive Vice President of DRAM Products & Technology at Samsung Electronics.
The DRAM, he added, signals Samsung's continued commitment to leading the DRAM market with high-performance, high-capacity solutions that meet the computing market's demand for large-scale processing.
Compared to its predecessor, Samsung's new DDR5 DRAM has made significant advances in reducing power consumption by up to 23% and increasing wafer productivity by up to 20%.
These advances make it an attractive solution for global IT companies looking to reduce their servers' and data centers' energy consumption and carbon footprint.
Samsung's successful development of 12nm-class process technology was facilitated by introducing a new high-κ material that increases cell capacitance.
More extraordinary capacitance results in a more significant electrical potential difference in data signals, improving accuracy.
In addition, Samsung's dedicated efforts to lower operating voltage and reduce noise contribute to providing the optimal solution that customers require.
The newly developed DDR5 DRAM boasts an impressive speed of up to 7.2 gigabits per second (Gbps).
To put this into perspective, this is the equivalent of processing two 30GB UHD movies in approximately one second.
As a result, DDR5 DRAM will support many applications, including data centers, artificial intelligence, and next-generation computing.
