San Jose, CA, USA - Samsung Electronics hosted its annual Memory Tech Day, attended by approximately 600 industry stakeholders.
Why it matters:
Samsung Electronics Memory Tech Day provided insights into evolving memory technologies expected to impact multiple sectors, including cloud computing, edge devices, and automotive applications.
The Key Points
- Samsung is developing 3D structures for sub-10nm DRAM and aims to start mass production of 1,000-layer vertical NAND (V-NAND) by early 2024.
- The HBM3E Shinebolt DRAM offers a per-pin speed of 9.8Gbps and can achieve transfer rates of more than 1.2Tbps.
- In the automotive sector, Samsung's removable AutoSSD offers 4TB of storage and read speeds of up to 6,500MBps.
What they say:
Jung-Bae Lee, head of Samsung's storage business, discussed the company's initiatives to meet the needs of the hyper-scale era.
He outlined plans to transition from the recently released 12nm class DRAM to an industry-leading density 11nm class DRAM.
Samsung also aims to reduce power consumption by developing ultra-low power memory technologies.
The Next:
Samsung plans to begin mass production of its 1,000-layer V-NAND in early 2024.
The company also focuses on sustainability by incorporating recycled materials into its portable SSD products and investing in ultra-low power technologies to reduce power consumption across platforms.
