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Source: Samsung Electronics

Seoul, South Korea - Samsung Electronics (KRX: 005930) announced a breakthrough in high-bandwidth memory (HBM).

Its HBM3E 12H is the industry's first 12-stack configuration with the highest available capacity of 36 gigabytes. 

It represents a 50% improvement in both speed and capacity over previous 8-stack HBM3 chips.

Samsung's innovation includes advanced Thermal Compression Non-Conductive Film (TC NCF), which allows the 12-layer chip to maintain the same height as 8-layer versions. 

This overcomes a critical technical challenge for future high-stack designs. This paves the way for future high-stack HBM designs.

Samsung is targeting the emerging AI sector, where the HBM3E 12H promises significant benefits. 

Internal simulations indicate a potential 34% increase in AI training speed, with the ability to handle more than 11.5 times the number of simultaneous inference service users compared to current HBM3 offerings.

Customers are now receiving samples of the HBM3E 12H, and Samsung plans to begin mass production in the first half of 2024.