Samsung develops industry's first 24Gb GDDR7 DRAM for next-gen AI computing

Seoul, South Korea - Samsung Electronics (005930. KS) has developed the industry's first 24-gigabit (Gb) GDDR7 DRAM, offering the highest capacity and fastest speed in graphics DRAM. 

The new GDDR7 DRAM achieves over 40 gigabits-per-second (Gbps) speeds, a 25% improvement over its predecessor. 

It utilizes 5th-generation 10-nanometer (nm)-class DRAM technology, increasing cell density by 50% while maintaining the same package size.

The 24Gb GDDR7 DRAM incorporates three-level Pulse-Amplitude Modulation (PAM3) signaling to achieve its industry-leading speed. 

Samsung states that the GDDR7's performance can be further enhanced to 42.5Gbps, depending on the usage environment. 

The new chip also features improved power efficiency, with a 30% reduction in power consumption through clock control management and dual VDD design.

Samsung expects the 24Gb GDDR7 to be used in data centers, AI workstations, graphics cards, gaming consoles, and autonomous driving applications. 

The company plans to begin validation with major GPU customers this year and aims for commercialization in early 2025. 

The 24Gb GDDR7 minimizes current leakage by using power gating design techniques to boost operational stability during high-speed operations.

YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, stated that the company will continue to lead the graphics DRAM market by developing products aligned with the growing needs of the AI market. 

Samsung's 24Gb GDDR7 DRAM follows the development of the industry's first 16Gb GDDR7 last year, reinforcing the company's technological leadership in the graphics DRAM market.