SK hynix Launches World's First 321-Layer 4D NAND Flash Memory

Seoul, South Korea - SK hynix Inc has started mass production of 321-layer triple-level cell 4D NAND Flash with one terabit capacity, becoming the first to exceed 300 layers in NAND production.

The memory manufacturer developed the device using a "3 plugs" process technology, which electrically connects three plugs through an optimized follow-up process.

The company achieved the 321-layer stacking by developing a low-stress material and introducing technology that automatically corrects alignments among the plugs.

The new NAND demonstrates a 59% productivity improvement compared to the previous 238-layer generation, and it utilizes the same development platform.

Performance metrics show a 12% improvement in data transfer speed and a 13% enhancement in reading performance compared to the previous generation, with data reading power efficiency increasing by more than 10%.

"SK hynix is on track to advancing to the Full Stack AI Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM," said Jungdal Choi, Head of NAND Development at SK hynix.

SK Hynix plans to provide the 321-layer products to customers in the first half of next year, focusing on AI applications that require low power and high performance.