Seoul, South Korea—Samsung Electronics announced the start of mass production of its 9th Generation Vertical NAND (V-NAND) memory, which has an industry-leading bit density approximately 50% higher than its predecessor.
The South Korean technology giant achieved this milestone by developing advanced channel hole etching technology and innovative cell architecture.
The 1 Terabit (Tb) Triple Level Cell (TLC) V-NAND showcases Samsung's process capabilities with the industry's smallest cell size and thinnest mold.
These advancements have enabled the company to increase bit density while significantly maintaining product quality and reliability.
In addition to its high-density design, 9th Generation V-NAND features a new NAND flash interface, "Toggle 5.1," which supports data input/output speeds of up to 3.2 gigabits per second (Gbps), a 33% increase over the previous generation.
Samsung also plans to expand support for PCIe 5.0 to strengthen its position in the high-performance solid-state drive (SSD) market.
The company has also addressed the growing importance of energy efficiency by reducing the power consumption of its latest V-NAND by 10% through advancements in low-power design.
This improvement addresses the growing demand for solutions that minimize energy consumption and carbon emissions.
While mass production of the 1Tb TLC model has already begun, Samsung plans to introduce a quad-level cell (QLC) version in the year's second half.
