SK hynix Develops Industry's First 1c DDR5 DRAM.

Seoul, South Korea - South Korean chipmaker SK hynix Inc. announced on Thursday it has developed the industry's first 16Gb DDR5 DRAM using its 1c node, the sixth generation of the 10nm process technology.

The company expects to begin mass production of the new chip within the year, with volume shipments starting in 2025. 

This development marks a significant step in the extreme scaling of memory process technology, which is approaching the 10nm level.

SK hynix claims the new 1c DDR5 offers an 11% improvement in operating speed compared to the previous generation, reaching 8Gbps. 

Power efficiency has also been enhanced by more than 9%, potentially reducing data center electricity costs by up to 30%.

Adopting new materials in certain extreme ultraviolet (EUV) processes and optimizing the overall EUV application process have improved the chip's cost competitiveness. 

SK hynix also reported a productivity increase of over 30% through design innovations.

Kim Jonghwan, Head of DRAM Development at SK hynix, stated the company plans to apply the 1c technology to major next-generation products, including HBM, LPDDR6, and GDDR7.

SK hynix developed the 1c node by leveraging its industry-leading 1b technology platform, the fifth generation of the 10nm process, to overcome technological limitations in DRAM scaling efficiently.

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